The adsorption capacity of adsorbents for ethane (C2) and hydrocarbons above C2 varies with pressure after the feed gas enters the adsorption tower of PSA unit. Under pressure, the hydrocarbon impurities above C2 in the feed gas are adsorbed, and the unsorted gas (purified gas) acts from the outlet of the adsorption tower. The adsorbed impurities are desorbed and desorbed from the adsorbent and regenerated at the same time. At least four adsorption beds are circulate to achieve continuous output of purified gas
Process principle:
After the raw material gas enters the adsorption tower of the PSA device, the adsorption capacity of the adsorbent in the tower for ethane (C2) and hydrocarbon components above C2 varies with the change of pressure. Under pressure, C2 and above hydrocarbon impurities in the raw material are adsorbed, and the unadsorbed gas (purification gas) is exported from the adsorption tower as a product. During decompression, the adsorbed impurities are desorbed and desorbed from the adsorbent, while the adsorbent is regenerated. At least four adsorption bed cycles are used to achieve continuous output of purified gas.
Raw gas:
Natural gas
Control mode and characteristics:
Control mode: Use
controller and instrument to control PSA device. The controller can choose DCS, FCS, PLC control system according to PSA device scale and control requirements.
Control features:
not only the conventional control of the system is realized, but also the expert control and adaptive optimization control of any combination and arbitrary switching of multiple towers are realized, which not only improves the flexibility of the operation of the device, but also ensures the long-term, stable and safe operation of the PSA device.
Service mode:
Provide patent and proprietary technology, provide a full set of device design
Provide general contract for equipment
Provide technical service and personnel training during installation and commissioning
The device is guaranteed for one year after acceptance
Long-term supply of spare parts
Raw gas:
Applicable pressure: 0.3~0.8MPa(gauge pressure, same below)
Applicable temperature: room temperature
Device output product: purification gas
C2: ≤100ppm
C3: ≤30ppm
CH4 yield: 70~90%
System resistance drop △P: ≤0.10MPa
Output temperature: normal temperature
Note: The CH4 yield is related to the material composition, pressure and C2 content in the product.
By-product: desorption
Output pressure: ≤0.02MPa
Output temperature: ≤40℃